BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Band alignment of Al2O3 with (-201) β-Ga2O3
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
The origin of negative charging in amorphous Al2O3 films: the role of native defects
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
Optical and Surface Studies of α-Al2O3 Powders
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Optical bandgap control in Al2O3/TiO2 heterostructures by plasma enhanced atomic layer deposition: Toward quantizing structures and tailored binary oxides - ScienceDirect
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
![PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/61c9ff559ecfa5e01e3660a2ec9ac70b1cebe4b1/4-TableI-1.png "PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar")
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
JSTS - Journal of Semiconductor Technology and Science
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram
Photochemistry of the -Al2O3-PETN Interface
